512 k EEPROM

FEATURES
■ Fast Read Access Times: 120/150 ns
■ Low Power CMOS Dissipation:
–Active: 50 mA Max.
–Standby: 200 µA Max.
■ Simple Write Operation:
–On-Chip Address and Data Latches
–Self-Timed Write Cycle with Auto-Clear
■ Fast Write Cycle Time:
–5ms Max
■ CMOS and TTL Compatible I/O

■ Automatic Page Write Operation:
–1 to 128 Bytes in 5ms
–Page Load Timer
■ End of Write Detection:
–Toggle Bit
–DATA Polling
■ Hardware and Software Write Protection
■ 100,000 Program/Erase Cycles
■ 100 Year Data Retention
■ Commercial, Industrial and Automotive
Temperature Ranges