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TIP120 – Bipolar (BJT) Single Transistor, Darlington, NPN, 60 V, 65 W, 5 A, 1000 hFE – 1pc

  • Collector to emitter voltage (Vce) is 60V
  • Collector current (Ic) is 5A
  • Power dissipation (Pd) is 65W
  • Collector to emitter saturation voltage of 4V at 5A collector current
  • DC current gain (hFE) of 1000
  • Operating junction temperature range from 150°C
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Availability:

1 in stock

45.00 99.00

1 in stock

The TIP120 from STMicroelectronics is a through hole complementary power darlington transistor in TO-220 package. This device manufactured in planar technology with “base island” layout and monolithic darlington configuration resulting in exceptional high gain performance coupled with very low saturation voltage.
  • Collector to emitter voltage (Vce) is 60V
  • Collector current (Ic) is 5A
  • Power dissipation (Pd) is 65W
  • Collector to emitter saturation voltage of 4V at 5A collector current
  • DC current gain (hFE) of 1000
  • Operating junction temperature range from 150°C

Applications

Power Management, Consumer Electronics, Portable Devices, Industrial

Warnings

Market demand for this product has caused an extension in lead times, delivery dates may fluctuate

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